| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| ST72324BK2 ST72F324BK2B5 ST72F324BK2B6 ST72F324BK2 |
8-bit MCU, 3.8 to 5.5 V operating range with 8 to 32 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
|
STMicroelectronics
|
| FF-1153-12.5 |
Operating Voltage = 250/480 Vac Operating Current Max= 12.5 amps
|
JMK Inc.
|
| FF-1319-13 |
Operating Voltage = DC to 250 Vac Operating Current (Max)= 13A
|
JMK Inc.
|
| LL-1319-13M |
Operating Voltage = DC to 250 Vac Operating Current (Max)= 13A
|
JMK Inc.
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| DN6845S |
Hall IC (Operating Supply Voltage Range Vcc=3.6 to 16V, Operating in One Way Magnetic Field)
|
Panasonic
|
| DN6849TE |
Hall IC(Operating Temperature Range Topr = - 40 to -100C, Operating in Alternative Magnetic Field)
|
Panasonic
|
| EF-0720-6 |
Operating Voltage = 115/250 V~ Operating Current = 6 Amps
|
JMK Inc.
|
